Reliability of SiC MOS devices q
نویسندگان
چکیده
Fundamental limitations to oxide reliability are analyzed in silicon carbide based devices. A barrier height primarily determined by band offsets between metal/SiC and the dielectric, and the electric field in the dielectric results in tunneling current into the dielectric, resulting in its degradation. Since band offsets for SiC to most dielectrics are smaller than those with respect to Si, a lower reliability is expected for SiC-dielectric based devices as compared to Si MOS devices. Other researchers have correlated interface states in the SiC–oxide as tunneling sites that increase gate leakage currents and influence the barrier to tunneling. Depending on the allowed maximum electric field in the gate oxide, there exists a trade-off between on-state resistance and SiC MOS reliability. 2004 Elsevier Ltd. All rights reserved. PACS: 81.40.Tv; 85.30.T; 85.30.Mn; 85.30.Tv
منابع مشابه
High Temperature Reliability of SiC n-MOS Devices up to 630 °C
SiC based field-effect devices are attractive for electronic and sensing applications above 250 oC. At these temperatures the reliability of the insulating dielectric in metal-oxidesemiconductor (MOS) structures becomes an important parameter in terms of long-term device performance. We report on the reliability of n-MOS SiC capacitors following thermal stress cycling in the 330 to 630 oC range...
متن کاملSiC Field-Effect Devices Operating at High Temperature
Field-effect devices based on SiC metal-oxide-semiconductor (MOS) structures are attractive for electronic and sensing applications above 250°C. The MOS device operation in chemically corrosive, high-temperature environments places stringent demands on the stability of the insulating dielectric and the constituent interfaces within the structure. The primary mode of oxide breakdown under these ...
متن کاملReliability and performance limitations in SiC power devices
Despite silicon carbide’s (SiC’s) high breakdown electric field, high thermal conductivity and wide bandgap, it faces certain reliability challenges when used to make conventional power device structures like power MOS-based devices, bipolar-mode diodes and thyristors, and Schottky contact-based devices operating at high temperatures. The performance and reliability issues unique to SiC discuss...
متن کاملAn extended linear hazard regression model with application to time-dependent-dielectric-breakdown of thermal oxides
We develop a generalized Extended Linear Hazard Regression (ELHR) model with linear time-varying coefficients to estimate reliability under normal operating conditions using failure time data obtained from accelerated conditions. The model considers the proportional hazards effect, time-varying coefficients effect as well as time-scale changing effect. Extensive simulation experiments demonstra...
متن کاملFundamental Aspects of Silicon Carbide Oxidation
Silicon carbide (SiC), which exhibits a wider band gap as well as a superior breakdown field and thermal conductivity over conventional Si, has gained considerable attention for future power electronics [1]. Among the various types of power devices, metal-oxide-semiconduc‐ tor field-effect transistors (MOSFETs), which provide a normally-off characteristic, should become a key component for next...
متن کامل